MMBT5551-7-F
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Transistor Polarity :NPN
Product Category :Bipolar Transistors - BJT
Mounting Style :SMD/SMT
Maximum DC Collector Current :0.6 A
Collector- Emitter Voltage VCEO Max :160 V
Package / Case :SOT-23-3
Maximum Operating Temperature :+ 150 C
Gain Bandwidth Product fT :300 MHz
Configuration :Single
Collector- Base Voltage VCBO :180 V
Series :MMBT5551
Emitter- Base Voltage VEBO :6 V
Collector-Emitter Saturation Voltage :0.2 V
Manufacturer :Diodes Incorporated
Description :Bipolar Transistors - BJT SS NPN 300mW
Stock :In Stock
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The MMBT5551-7-F,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
